feature z excellent h fe linearity z low noise z complementary to a733 marking:cr maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c =100ua, i e =0 60 v collector-emitter breakdown voltage v(br) ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage v(br) ebo i e =0.1ma, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 ua collector cut-off current i cer v ce =55v,r=10m ? 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua h fe(1) v ce =6 v , i c =1ma 130 400 dc current gain h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f =30 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1k mh z 4 10 db classification of h fe(1) rank l h range 130-200 200-400 so t -23 1. base 2. emitter 3. collector C945 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu C945
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